metal-insulator transition造句

• Crystal structure and metal - insulator transition properties of dc magnetron sputtered la0 . 825sr0 . 175mno3 films
  直流磁控溅射沉积锰酸锶镧薄膜的结构与相变特性研究
• The metal - insulator transition temperature ( tmi ) varies from 190k to 240k commonly for the as - grown samples
  溅射后无处理时薄膜的金属?绝缘体转变温度点通常在190 240k之间。
• As one of the most important applications , cmr bolometer is fabricated using the lacamno3 films , which has a metal - insulator transition temperature at 300k . the archetypal bolometer is fabricated after the film is photolithographed , evaporated au electrodes and fixed
  以制作室温超巨磁电阻测辐射热仪为目标，将t _ ( mt ) 300k ， tcr 5的薄膜进行光刻、电极制作、封装等处理制作测辐射热仪原型器件。
• The discovery of the colossal magnetoresistance ( cmr ) in hole - doped perovskite manganites ra1 - xmxmno3 ( ra is a trivalent rare - earth ion and m is a metal ion ) has attracted much attention since 1989 due to not only its technological applications in magnetic recording and sensor , but also the effect of the strong correlation concerning metal - insulator transition in the field of basic research . since then , several physics models have been suggested to explain the mechanism of cmr . however , the exact mechanism of cmr remains to be done
  自1989年在掺杂钙钛矿型锰氧化物ra _ ( 1 - x ) m _ xmno _ 3 (其中m为金属离子， ra为三价稀土离子)中发现庞磁电阻( cmr )以来由于其在磁记录、磁传感器等方面潜在的应用前景，以及金属?绝缘体相变等所涉及的强关联效应，使该类化合物吸引了物理学界的广泛注意。
• One of the most important directions in the study of colossal magnetoresistance materials is to fabricate the bolometer , which can work near the room temperature and shows an excellent performance , if the films can be prepared with the metal - insulator transition temperature ( tmi ) reaching to the room temperature
  利用超巨磁电阻材料制作工作于室温的高性能测辐射热仪是国际上cmr应用研究的一个重要方向，而能否制备具有室温转变点的薄膜材料是其中的一个决定因素。